Datasheet SGSD100 200 .pdf


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Nom original: Datasheet-SGSD100-200.pdf
Titre: COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Auteur: SGS-THOMSON Microelectronics

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SGSD100
SGSD200
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS




SGS-THOMSON PREFERRED SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
MONOLITHIC DARLINGTON
CONFIGURATION

APPLICATIONS:
GENERAL PURPOSE SWITCHING
APPLICATION
■ GENERAL PURPOSE AMPLIFIERS


3
2
1

DESCRIPTION
The SGSD100 is silicon epitaxial-base NPN
power transistor in monolithic Darlington
configuration mounted in TO-218 plastic
package.
It is inteded for use in general purpose and high
current amplifier applications.
The complementary PNP type is the SGSD200.

TO-218

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol

Parameter

Value
NPN

SGSD100

PNP

SGSD200

V CBO

Collector-Base Volta ge (I E = 0)

V CEO

Collector-Emitte r Voltage (I B = 0)

80

V

Collector Current

25

A

Collector Peak Current

40

A
A

IC
I CM

80

Unit

V

Base Current

6

I BM

Base Peak Current

10

A

P tot

Total Dissipation at T c ≤ 25 o C

130

W

T st g

Storage Temperature

IB

Tj

Max. Operating Junction Temperature

-65 to 150

o

C

150

o

C

For PNP types voltage and current values are negative.

September 1997

1/6

SGSD100/SGSD200
THERMAL DATA
R thj-ca se

Thermal Resistance Junction-case

Max

o

0.96

C/W

o

ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
Symbol

Parameter

Test Conditions

Typ.

Max.

Unit

ICBO

Collecto r Cut-of f
Current (I E = 0)

VCE = 80 V
VCE = 80 V

T c = 100 o C

0. 5
1. 5

mA
mA

ICEV

Collecto r Cut-of f
Current (VBE = -0.3V)

VCE = 80 V
VCE = 80 V

T c = 100 o C

0. 1
2

mA
mA

ICEO

Collecto r Cut-of f
Current (I B = 0)

VCE = 60 V
VCE = 60 V

T c = 100 o C

0. 5
1. 5

mA
mA

I EBO

Emitter Cut-off Current VEB = 5 V
(I C = 0)

2

mA

V CEO(su s)∗ Collecto r-Emitter
Sustaining Voltage
V CE(sat )∗

VBE( sat) ∗

Collecto r-Emitter
Saturation Voltage

I C = 50 mA
IC
IC
IC
IC
IC
IC

=
=
=
=
=
=

5A
5A
10 A
10 A
20 A
20 A

80
IB
IB
IB
IB
IB
IB

= 20
= 20
= 40
= 40
= 80
= 80

V
V
V
V
V
V

Tc = 100 o C
Tc = 100 o C

2.6
2.5

3. 3

Tc = 100 o C

V
V

1

1.8
1.6

3

V
V

600

5000
8000
4000
8000
2000
2000

150 00

IB = 80 mA
IB = 80 mA

VBE ∗

Base-Emitter Volta ge

I C = 10 A
I C = 10 A

VCE = 3 V
VCE = 3 V

hFE ∗

DC Current Gain

IC
IC
IC
IC
IC
IC

=
=
=
=
=
=

5A
5A
10 A
10 A
20 A
20 A

VCE
VCE
VCE
VCE
VCE
VCE

Diode Forward Voltage I F
IF
IF
IF
IF
IF

=
=
=
=
=
=

5A
5A
10 A
10 A
20 A
20 A

3
3
3
3
3
3

V
V
V
V
V
V

T c = 100 o C

T c = 100 o C
T c = 100 o C

500
T c = 100 o C
T c = 100 o C

300

1.2
0.85
1.6
1.4
2.3
1.3

T c = 100 o C
T c = 100 o C
T c = 100 o C

Es/ b

Second Breakdown
Energy

VCC = 30 V L = 3 mH
VCC = 30 V L = 3 mH

I s/b

Second Breakdown
Current

VCE = 25 V t = 500 ms

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.

1. 2

0.95
0.8
1.2
1.3
2
2.3

I C = 20 A
I C = 20 A

=
=
=
=
=
=

V

mA
mA
mA
mA
mA
mA

Base-Emitter
Saturation Voltage

VF ∗

2/6

Min.

Tc = 100 o C

1.75
3. 5

120 00
6000
V
V
V
V
V
V

250
250

mJ
mJ

6

A

SGSD100/SGSD200
Safe Operating Areas

DC Current Gain (NPN type)

DC Current Gain (PNP type)

DC Current Gain (NPN type)

DC Current Gain (PNP type)

Collector-Emitter Saturation Voltage (NPN type)

3/6

SGSD100/SGSD200
Collector-Emitter Saturation Voltage (PNP type)

4/6

SGSD100/SGSD200

TO-218 (SOT-93) MECHANICAL DATA
mm

DIM.
MIN.

inch

TYP.

MAX.

MIN.

TYP.

MAX.

A

4.7

4.9

0.185

0.193

C

1.17

1.37

0.046

0.054

D

2.5

0.098

E

0.5

0.78

0.019

0.030

F

1.1

1.3

0.043

0.051

G

10.8

11.1

0.425

0.437

H

14.7

15.2

0.578

0.598

L2



16.2



0.637

L3

18

L5

0.708

3.95

4.15

L6

0.155

0.163

31

1.220



12.2



0.480

Ø

4

4.1

0.157

0.161

D

C

A

E

R

L6

L5

H

G

L3
L2

F

¯

R

1

2

3

P025A

5/6

SGSD100/SGSD200

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
. ..

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